| Sign In | Join Free | My benadorassociates.com |
|
Pd - Power Dissipation : 238W
Td(off) : 52ns
Td(on) : 10ns
Operating Temperature : -40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces) : 1.2kV
Input Capacitance(Cies) : 1.26nF@25V
IGBT Type : FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.5V@250uA
Gate Charge(Qg) : 112nC@15V
Reverse Recovery Time(trr) : 283ns
Switching Energy(Eoff) : 670uJ
Turn-On Energy (Eon) : 380uJ
Description : IGBT FS (Field Stop) 1.2kV 30A 238W Through Hole TO-247
Mfr. Part # : SL15T120FL1
Model Number : SL15T120FL1
Package : TO-247
The SL15T120FL1 is a high-performance component featuring Trench FS Technology and ROHS compliance. It is designed for general-purpose inverters, induction heating (IH), and UPS applications. Key advantages include low gate charge.
SLKOR
Trench FS Technology
ROHS
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | Vces | 1200 | V | |||
| Collector Current-continuous | Ic | T=25C | 30 | A | ||
| Collector Current-continuous | Ic | T=100C | 15 | A | ||
| Collector Current-pulse | Icm | (note 1) | 45 | A | ||
| Diode Continuous forward current | If | T=25C | 30 | A | ||
| Diode Continuous forward current | If | T=100C | 15 | A | ||
| Diode Maximum Forward Current | Ifm | (Note 1) | 45 | A | ||
| Gate-Emitter Voltage | Vees | 120 | V | |||
| Power Dissipation (TO-247) | Pd | Tc=25C | 238 | W | ||
| Operating Temperature Range | Tj | -40 | 175 | C | ||
| Storage Temperature Range | Tsta | -55 | 150 | C | ||
| Maximum Lead Temperature for Soldering Purposes | Tl | 300 | C | |||
| Collector-Emitter Voltage | BVces | Ic=250A,Vge=0V | 1200 | - | - | V |
| Zero Gate Voltage Collector Current | Ices | Vge=1200V,Vee=0V, Tc=25C | - | 100 | A | |
| Collector Current | Ices | Tc=100C | - | 2 | mA | |
| Gate-Body leakage current, reverse | I GBO | Vce=0V,Vge=-20V | - | - | 150 | nA |
| Gate-Emitter Threshold Voltage | VGE(th) | Vce=Vge, Ic=250A | 5 | - | 6.5 | V |
| Collector-Emitter saturation Voltage | VCE(SAT) | Vge=15V,Ic=15A, Tc=25C | 1.16 | 1.21 | V | |
| Collector-Emitter saturation Voltage | VCE(SAT) | Tc=125C | - | 1.9 | V | |
| Collector-Emitter saturation Voltage | VCE(SAT) | Tc=150C | - | 2.1 | V | |
| Input capacitance | Cies | - | 1260 | - | pF | |
| Output capacitance | Coes | Vce=25V, Vge=0V, f=1.0MHz | - | 78 | - | F |
| Reverse transfer capacitance | Cres | - | 11.4 | - | pF | |
| Total Gate Charge | Qg | Vcc=960V, Ic=15A | - | 12 | - | nC |
| Gate to emitter charge | Qge | Vge=15V | - | 3.6 | 8.8 | nC |
| Gate to collector charge | Qgc | - | 80.7 | - | nC | |
| Turn-On delay time | td(on) | - | 10 | - | ns | |
| Turn-On rise time | tr | - | 34 | - | ns | |
| Turn-off delay time | td(off) | Vee=600V,Ic=15A, Re=10, Inductive | - | 52 | - | ns |
| Turn-off Fall time | tf | - | 174 | - | ns | |
| Turn-on energy | Eon | load Tc=25C | - | 0.38 | - | mJ |
| Turn-off energy | Eoff | - | 0.67 | - | mJ | |
| Total switching Energy | Etot | - | 1.05 | - | mJ | |
| Diode Forward Voltage | Vsd | Vce=0V, If=15A | - | 1.85/2.2 | - | V |
| Diode Reverse recovery time | trr | Vee=0V, Vr=600V, If=15A | - | 283 | - | ns |
| Reverse recovery charge | Qrr | dIr/dt=450A/s | - | 180 | - | nC |
| Symbol | Parameter | Type | Units | |
|---|---|---|---|---|
| RthJC | Thermal Resistance, Junction to case | 0.63 | C/W | |
| RthJ-A | Thermal Resistance, Junction to Ambient | 40 | C/W |
|
|
Slkor SL15T120FL1 Images |