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Slkor SL20T65FL

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Slkor SL20T65FL

Td(off) : 52ns

Pd - Power Dissipation : 162W

Td(on) : 16ns

Operating Temperature : -55℃~+175℃@(Tj)

Collector-Emitter Breakdown Voltage (Vces) : 650V

Input Capacitance(Cies) : 1.5nF@25V

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.5V@250uA

Gate Charge(Qg) : 43.9nC@20A,15V

Reverse Recovery Time(trr) : 429ns

Switching Energy(Eoff) : 300uJ

Turn-On Energy (Eon) : 790uJ

Description : IGBT FS (Field Stop) 650V 20A 162W Through Hole TO-247

Mfr. Part # : SL20T65FL

Model Number : SL20T65FL

Package : TO-247

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Product Overview

Features: Low gate charge, Trench FS Technology, saturation voltage: VCE(sat), typ =1.6V, IC=20A and TC =25C, RoHS product.
Applications: General purpose inverters, UPS.

Brand

SLKOR

Certifications

RoHS

Package Types

TO-220F, TO-220, TO-263, TO-247

Parameter	Symbol / Unit	Tests conditions	Min	Typ	Max	Units
Collector-Emmiter Voltage	Vces				650	V
Collector Current-continuous (T=25)	Ic				40	A
Collector Current-continuous (T=100)	Ic				20	A
Collector Current-pulse (note 1)	ICM				80	A
Diode RMS forward current (T=25)	IF				40	A
Diode RMS forward current (T=100)	IF				20	A
Gate-Emmiter Voltage	VGES			20		V
Surge non repetitive forward current (tp=10ms sinusoidal)	IFSM				80	A
Power Dissipation (TC=25)	PD			156	162	W
Diode Forward Current (TC=100)	PD				20	A
Storage Temperature Range	TSTG		-55		+150
Operating Temperature Range	TJ		-55		+175
Maximum Lead Temperature for Soldering Purposes	TL				300
Breakdown Voltage	BVCES	IC=500A,VGE=0V	650			V
Breakdown Voltage Temperature Coefficient	BVCES/TJ	IC=1mA,referenced to 25		-0.5		V/
Zero Gate Voltage Collector Current	ICES	VCE=650V,VGE=0V, TC=25		10		A
Gate-body leakage current	IGES	VCE=0V,VGE=20V			200	nA
Gate-Emmiter Threshold Voltage	VGE(th)	VCE=VGE, lc=250uA	4.5		6.5	V
Collector-Emitter saturation Voltage (VGE=15V,IC=20A, TC=25)	VCESAT			1.6	2.0	V
Collector-Emitter saturation Voltage (Tc=125)	VCESAT	VGE=15V,IC=20A		1.75	2.15	V
Collector-Emitter saturation Voltage (TC=175)	VCESAT	VGE=15V,IC=20A		1.9	2.3	V
Short Collector current (Note 2)	Ic(sc)	VGE=15V, VCE=360V, tsc< 10us, Tc<=25		116.7		A
Input capacitance	Cies	VCE=25V, VGE=0V, f=1.0MHZ, Tc=25		1500		pF
Output capacitance	Coes	VCE=25V, VGE=0V, f=1.0MHZ, Tc=25		128		pF
Reverse transfer capacitance	Cres	VCE=25V, VGE=0V, f=1.0MHZ, Tc=25		28.7		pF
Turn-On delay time (Tc=25)	td(on)	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		16		ns
Turn-On rise time (Tc=25)	tr	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		56		ns
Turn-off delay time (Tc=25)	td(off)	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		52		ns
Turn-off Fall time (Tc=25)	tf	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		82		ns
Turn-on energy (Tc=25)	Eon	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		0.79		mJ
Turn-off energy (Tc=25)	Eoff	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		0.3		mJ
Total switching Energy (Tc=25)	Etotal	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		1.09		mJ
Turn-On delay time (Tc=175)	td(on)	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		14		ns
Turn-On rise time (Tc=175)	tr	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		54		ns
Turn-off delay time (Tc=175)	td(off)	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		76		ns
Turn-off Fall time (Tc=175)	tf	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		146		ns
Turn-on energy (Tc=175)	Eon	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		0.8		mJ
Turn-off energy (Tc=175)	Eoff	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		0.49		mJ
Total switching Energy (Tc=175)	Etotal	VCE=400V,Ic=20A, RG=10,VGE=15V, Inductive Load		1.3		mJ
Total Gate Charge	Qg	VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4)		43.9		nC
Gate to emitter charge	Qge	VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4)		10.0
Gate to collector charge	Qgc	VCE=400V,Ic=20A RG=10,VGE=15V TC=25(note3,4)		18.9
Gate resistance	Rg	f=1MHz,open collector		1.8
Diode Forward Voltage (TC=25)	VF	VGE=0V,IF=20A		1.4		V
Diode Forward Voltage (TC=125)	VF	VGE=0V,IF=20A		1.2		V
Diode Forward Voltage (TC=175)	VF	VGE=0V,IF=20A		1.0		V
Diode Reverse recovery time (TC=25)	trr	VGE=0V, IF=20A dl=/dt=100A/us (note 4)		254		ns
Reverse recovery charge (TC=25)	Qrr	VGE=0V, IF=20A dl=/dt=100A/us (note 4)		347		nC
Diode Reverse recovery Current (TC=25)	Irrm	VGE=0V, IF=20A dl=/dt=100A/us (note 4)		2.7		A
Diode Reverse recovery time (TC=175)	trr	VGE=0V, IF=20A dl=/dt=100A/us (note 4)		429		ns
Reverse recovery charge (TC=175)	Qrr	VGE=0V, IF=20A dl=/dt=100A/us (note 4)		1010		nC
Diode Reverse recovery Current (TC=175)	Irrm	VGE=0V, IF=20A dl=/dt=100A/us (note 4)		4		A
IGBT Thermal Resistance, Junction to Case	Rth(j-c)			0.77		/W
FRD Thermal Resistance, Junction to Case	Rth(j-c)			2.05		/W
Thermal Resistance, Junction to Ambitent	Rth(j-A)			33.8	62.5	/W

Order codes	Package	Packaging
SL20T65F	TO-220F	Tube
SL20T65	TO-220	Tube
SL20T65FZ	TO-263	Tube
SL20T65FL	TO-247	Tube

2409302302_Slkor-SL20T65FL_C6800596.pdf

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