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Plastic encapsulated switching diode JSCJ DAN222 suitable for high density electronic layouts

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Plastic encapsulated switching diode JSCJ DAN222 suitable for high density electronic layouts

Non-Repetitive Peak Forward Surge Current : 2A

Reverse Leakage Current (Ir) : 100nA@70V

Reverse Recovery Time (trr) : 4ns

Operating Junction Temperature Range : -

Voltage - DC Reverse (Vr) (Max) : 80V

Diode Configuration : 1 Pair Common Cathode

Pd - Power Dissipation : 150mW

Voltage - Forward(Vf@If) : 1.2V@100mA

Current - Rectified : 100mA

Description : Diode Array 1 Pair Common Cathode 80V 100mA Surface Mount SOT-523-3

Mfr. Part # : DAN222

Model Number : DAN222

Package : SOT-523-3

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Product Overview

The DAN222 is a high-speed switching diode in a SOT-523 plastic-encapsulated package. It offers high reliability and is suitable for high packing density layouts. Available in four types of packaging, this diode is designed for efficient switching applications.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Marking: Solid dot = Green molding compound device, if none, the normal device.

Technical Specifications

Parameter	Symbol	Test conditions	Min	Max	Unit
Reverse breakdown voltage	V(BR)	IR= 100A	80		V
Reverse voltage leakage current	IR	VR=70V		0.1	A
Forward voltage	VF	IF=100mA		1.2	V
Diode capacitance	CD	VR=0, f=1MHz		3.5	pF
Reverse recovery time	trr	VR=6V, IF=IR=5mA		4	ns
Non-Repetitive Peak Reverse Voltage	VRM	@Ta=25		80	V
DC Blocking Voltage	VR	@Ta=25		80	V
Forward Continuous Current	IFM	@Ta=25		300	mA
Average Rectified Output Current	IO	@Ta=25		100	mA
Power Dissipation	PD	@Ta=25		150	mW
Junction Temperature	TJ			150
Storage Temperature Range	TSTG		-55	+150
Thermal resistance (Junction to ambient)	RJA			833	/W
Forward Surge Current (Non-Repetitive Peak, @t=8.3ms)	IFSM			2.0	A

2410121317_JSCJ-DAN222_C68999.pdf

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