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Voltage Controlled Switching Device GOODWORK SI2300 NChannel Transistor with Low OnState Resistance

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Voltage Controlled Switching Device GOODWORK SI2300 NChannel Transistor with Low OnState Resistance

Configuration : -

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 6A

RDS(on) : 73mΩ@1.8V

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 1V@250uA

Type : -

Reverse Transfer Capacitance (Crss@Vds) : 137pF@10V

Number : 1 N-channel

Output Capacitance(Coss) : -

Input Capacitance(Ciss) : 630pF@10V

Pd - Power Dissipation : 1.25W

Gate Charge(Qg) : -

Description : N-Channel 20V 6A 1.25W Surface Mount SOT-23

Mfr. Part # : SI2300

Model Number : SI2300

Package : SOT-23

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Product Overview

The SI2300 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(ON), is rugged and reliable, and offers high saturation current capability. This transistor is suitable for applications requiring efficient switching and high current handling in a compact SOT-23 package.

Product Attributes

Brand: DEMACHEL
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =250A	20			V
Gate-source leakage current	IGSS	VDS =0V, VGS =12V			100	nA
Zero gate voltage drain current	IDSS	VDS =16V, VGS =0V			1.0	A
Gate threshold voltage	VGS(th)	VDS =VGS, ID =250A	0.5	0.7	1.0	V
Drain-source on-state resistance	RDS(on)	VGS =4.5V, ID =5.0A	22	27		m
Drain-source on-state resistance	RDS(on)	VGS =2.5V, ID =4.0A	35	73		m
Drain-source on-state resistance	RDS(on)	VGS =1.8V, ID =2.0A				m
Diode forward voltage	VSD	VGS =0V,IS=1A		0.75	1	V
Forward transconductance	gfs	VDS =5V, ID =3.8A		4		S
Input capacitance	Ciss	VDS =10V,VGS =0V,f =1MHz		630		pF
Output capacitance	Coss			164		pF
Reverse transfer capacitance	Crss			137		pF
Gate resistance	Rg	VDS =0V,VGS =0V,f =1MHz		1.5
Turn-on delay time	td(on)	VGS=5V,VDS=10V, RL=1.7,RGEN=6		5.5		ns
Rise time	tr			14		ns
Turn-off delay time	td(off)			29		ns
Fall time	tf			10.2		ns

2508270929_GOODWORK-SI2300_C21713994.pdf

Quality Voltage Controlled Switching Device GOODWORK SI2300 NChannel Transistor with Low OnState Resistance for sale

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