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Battery Protection Load Switch P Channel Transistor BLUE ROCKET BRCS4443SC with SOP 8 Package Design

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Battery Protection Load Switch P Channel Transistor BLUE ROCKET BRCS4443SC with SOP 8 Package Design

Drain to Source Voltage : 40V

Current - Continuous Drain(Id) : 6A

Operating Temperature - : -55℃~+150℃

RDS(on) : 42mΩ@10V

Gate Threshold Voltage (Vgs(th)) : 2.6V@250uA

Type : P-Channel

Reverse Transfer Capacitance (Crss@Vds) : 72pF

Number : 1 P-Channel

Output Capacitance(Coss) : 97pF

Input Capacitance(Ciss) : 1.175nF

Pd - Power Dissipation : 3.1W

Gate Charge(Qg) : 22nC@10V

Description : P-Channel 40V 6A 3.1W Surface Mount SOP-8

Mfr. Part # : BRCS4443SC

Model Number : BRCS4443SC

Package : SOP-8

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Product Overview

The BRCS4443SC is a P-Channel Enhancement Mode Field Effect Transistor designed for use in a SOP-8 plastic package. It is suitable for battery protection and load switch applications. Key features include a Drain-Source Voltage (VDS) of -40V, a continuous Drain Current (ID) of -6A at VGS = -10V, and a low on-resistance (RDS(ON)) of less than 42m at VGS = -10V and less than 63m at VGS = -4.5V.

Product Attributes

Brand: FS (implied by URL http://www.fsbrec.com)
Package Type: SOP-8 Plastic Package
Channel Type: P-Channel
Mode: Enhancement Mode
Marking Code: BR **** 4443 (BR: Company Code, 4443: Product Type, ****: Lot No. Code)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage	VDSS				-40	V
Gate-Source Voltage	VGSS				20	V
Continuous Drain Current	ID	(Ta=25C)			-6	A
Continuous Drain Current	ID	(Ta=70C)			-5	A
Pulsed Drain Current	IDM	C			-40	A
Avalanche Current	IAS, IAR	C			20	A
Avalanche energy	EAS, EAR	L=0.1mH C			20	mJ
Power Dissipation	PD	(Ta=25) B			3.1	W
Power Dissipation	PD	(Ta=70) B			2	W
Junction and Storage Temperature Range	Tj ,Tstg		-55		150
Thermal Characteristics
Maximum Junction-to-Ambient	RJA	t 10s A		31	40	/W
Maximum Junction-to-Ambient	RJA	D		59	75	/W
Maximum Junction-to-Lead	RJL			16	24	/W
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage	BVDSS	ID=-250A VGS=0V	-40			V
Zero Gate Voltage Drain Current	IDSS	VDS=-40 VGS=0V			-1.0	A
Zero Gate Voltage Drain Current	IDSS	VDS=-40 VGS=0V TJ=55C			-5.0	A
Gate-Body leakage current	IGSS	VDS=0V VGS=20			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS ID=-250A	-1.5	-2.0	-2.6	V
On state drain current	ID(ON)	VGS=-10V VDS=-5V		40		A
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V ID=-6A		35	42	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V ID=-6A TJ=125C		53	65	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V ID=-5.0A		46.5	63	m
Forward Transconductance	gFS	VDS=-5V ID=-6A		17		S
Diode Forward Voltage	VSD	IS=-1A VGS=0V		-0.76	-1.0	V
Maximum Body-Diode Continuous Current	IS				-3.5	A
Total Gate Charge	Qg(10V)	VGS=-10V VDS=-20V ID=-6A		17.3	22	nC
Total Gate Charge	Qg(4.5V)			8.4	11	nC
Gate-Source Charge	Qgs			3.2		nC
Gate-Drain Charge	Qgd			4.3		nC
Gate Resistance	Rg	VGS=0V VDS=0V f=1MHz		7.0	14
Input Capacitance	Ciss	VGS=0V VDS=-20V f=1MHz		750	940	pF
Output Capacitance	Coss			97		pF
Reverse Transfer Capacitance	Crss			72		pF
Turn-on Delay Time	td(ON)	VGS=-10V VDS=-20V RL=3.35 RGEN=3		10.3		ns
Turn-on Rise Time	tr			4.3		ns
Turn-off Delay Time	td(OFF)			39		ns
Turn-off Fall Time	tf			46.5		ns
Body Diode Reverse Recovery Time	trr	IF=-6A dI/dt=100A/s		17	24	ns
Body Diode Reverse Recovery Charge	Qrr	IF=-6A dI/dt=100A/s		11.5		nC

Package Dimensions: Refer to page 8 of the datasheet.

Soldering Profile: Temperature Profile for IR Reflow Soldering (Pb-Free) specified on page 9.

Resistance to Soldering Heat Test Conditions: Temperature: 2605, Time: 101 sec.

Packaging Specifications: REEL Package Type SOP/ESOP-8, 4,000 Units/Reel.

2409271633_BLUE-ROCKET-BRCS4443SC_C22448999.pdf

Quality Battery Protection Load Switch P Channel Transistor BLUE ROCKET BRCS4443SC with SOP 8 Package Design for sale

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