Sign In | Join Free | My benadorassociates.com
China Hefei Purple Horn E-Commerce Co., Ltd. logo
Hefei Purple Horn E-Commerce Co., Ltd.
Hefei Purple Horn E-Commerce Co., Ltd.
Verified Supplier

1 Years

Home > Single Bipolar Transistors >

General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP Type in TO3P Plastic Package

Hefei Purple Horn E-Commerce Co., Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP Type in TO3P Plastic Package

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 5uA

Pd - Power Dissipation : 150W

Transition frequency(fT) : 30MHz

type : PNP

Current - Collector(Ic) : 15A

Collector - Emitter Voltage VCEO : 360V

Operating Temperature : -

Description : Bipolar (BJT) Transistor PNP 360V 15A Through Hole TO-3PH

Mfr. Part # : NJW0302GC

Model Number : NJW0302GC

Package : TO-3PH

Contact Now

Product Overview

The NJW0302GC is a Silicon PNP transistor in a TO-3P Plastic Package, designed for 100W high fidelity audio frequency amplifier output stages. It serves as a complementary component to the NJW0281GC and is suitable for general power amplification applications.

Product Attributes

  • Brand: Fsb (implied by datasheet URL)
  • Package Type: TO-3P Plastic Package
  • Transistor Type: PNP Silicon

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage VCBO -360 V
Collector to Emitter Voltage VCEO -360 V
Emitter to Base Voltage VEBO -5 V
Collector Current - Continuous IC -15 A
Peak Collector Current ICP -30 A
Base Current IB -1.5 A
Collector Power Dissipation PC(TC=25) 150 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Electrical Characteristics (Ta=25)
Collector to Emitter Breakdown Voltage VCEO IC=-50mA, IB=0 -360 V
Collector Cut-Off Current ICBO VCB=-230V, IE=0 -5.0 A
Emitter Cut-Off Current IEBO VEB=-5.0V, IC=0 -5.0 A
DC Current Gain hFE(1) VCE=-5.0V, IC=-1.0A 55 160
hFE(2) VCE=-5.0V, IC=-7.0A 35 80
Collector to Emitter Saturation Voltage VCE(sat) IC=-8.0A, IB=-0.8A -1.5 -3.0 V
Base to Emitter Voltage VBE VCE=-5.0V, IC=-7.0A -1.2 -1.5 V
Transition Frequency fT IC=-1.0A, VCE=-5.0V 30 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1.0MHz 360 pF

Packaging Specifications

Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Inner Box Dimensions (mm) Outer Box Dimensions (mm)
TO-3P (Tube) 30 15 450 5 2250 497.5468 57516450

Soldering Information

  • Temperature Profile for Dip Soldering (Pb-Free): Preheating: 25~150 for 60~90 sec; Peak Temp.: 2555 for 50.5 sec; Cooling Speed: 2~10/sec.
  • Resistance to Soldering Heat Test Conditions: Temp.: 2705, Time: 101 sec.

Marking Instructions

The marking consists of: BR (Company Code), NJW0302GC (Product Type), and **** (Lot No. Code, which changes with Lot No.).


2410121236_BLUE-ROCKET-NJW0302GC_C7429849.pdf


Quality General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP Type in TO3P Plastic Package for sale

General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP Type in TO3P Plastic Package Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)