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Power MOSFET module featuring Jingdao Microelectronics D7N70 for high voltage switching applications

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Power MOSFET module featuring Jingdao Microelectronics D7N70 for high voltage switching applications

Drain to Source Voltage : 700V

Current - Continuous Drain(Id) : 7A

RDS(on) : 1.5Ω@10V,3.5A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 13pF

Output Capacitance(Coss) : 103pF

Pd - Power Dissipation : 54W

Input Capacitance(Ciss) : 1.08nF@25V

Gate Charge(Qg) : 22nC@10V

Description : N-Channel 700V 7A 54W Surface Mount TO-252W

Mfr. Part # : D7N70

Model Number : D7N70

Package : TO-252W

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Product Overview

The D7N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics co.LTD
Origin: Shandong, China
Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
Certifications: RoHS compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDSS	700	V
Gate-Source Voltage	VGSS	±30	V
Continuous Drain Current	ID	7	A	Tc=25°C
Continuous Drain Current	ID	4.5	A	Tc=100°C
Pulsed Drain Current	IDM	28	A	Note 2
Power Dissipation	PD	54	W	Tc=25°C
Avalanche Energy Single Pulsed	EAS	530	mJ	Note 3
Peak Diode Recovery dv/dt	dv/dt	4.5	V/ns	Note 4
Junction Temperature and Storage Temperature	Tj, stg	-55 ~ +150	°C
THERMAL DATA
Junction to Ambient	RthJA	63	°C/W
Junction to Case	RthJC	2.31	°C/W
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage	BVDSS	700	V	ID=250µA, VGS=0V
Gate-Source Leakage Current	IGSS	±100	nA	VGS=±30V, VDS=0V
Drain-Source Leakage Current	IDSS	1	µA	VDS=700V, VGS=0V
ON CHARACTERISTICS
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance	RDS(ON)	1.5	Ω	VGS=10V, ID=3.5A
DYNAMIC CHARACTERISTICS
Input Capacitance	CISS	1080	pF	VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance	COSS	103	pF
Reverse Transfer Capacitance	CRSS	13	pF
Total Gate Charge	QG	22	nC	VDS=560V, VGS=10V, ID=7A, IG=1mA (NOTE1,2)
Gate-Drain Charge	QGD	7	nC
Gate-Source Charge	QGS	12	nC
Turn-On Delay Time	tD(ON)	5.5	ns	VDS=100V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2)
Turn-On Rise Time	tR	20	ns
Turn-Off Delay Time	tD(OFF)	74	ns
Turn-Off Fall Time	tF	33	ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current	IS	7	A
Maximum Body-Diode Pulsed Current	ISM	28	A
Drain-Source Diode Forward Voltage	VSD	1.4	V	IS=7A, Note 1
Reverse Recovery Time	trr	506	ns	IS=7A, VGS=0V, di/dt=100A/µs
Reverse Recovery Charge	Qrr	2.7	µC	IS=7A, VGS=0V, di/dt=100A/µs

2209091800_Jingdao-Microelectronics-D7N70_C5157076.pdf

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