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High side load switching P Channel MOSFET JSCJ CJ2101 with plastic encapsulate and SOT 323 package

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High side load switching P Channel MOSFET JSCJ CJ2101 with plastic encapsulate and SOT 323 package

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 1.4A

Operating Temperature - : -50℃~+150℃

RDS(on) : 210mΩ@1.8V,0.3A

Gate Threshold Voltage (Vgs(th)) : 450mV

Reverse Transfer Capacitance (Crss@Vds) : 82pF

Number : 1 P-Channel

Input Capacitance(Ciss) : 640pF

Pd - Power Dissipation : 290mW

Gate Charge(Qg) : -

Description : P-Channel 20V 1.4A 0.29W Surface Mount SOT-323

Mfr. Part # : CJ2101

Model Number : CJ2101

Package : SOT-323

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Product Overview

The CJ2101 is a P-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, featuring leading trench technology for low RDS(on). This design contributes to extending battery life in various applications. It is ideal for high-side load switching, charging circuits, and single-cell battery applications found in devices such as cell phones, digital cameras, and PDAs.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Product Series: CJ2101
Material: Plastic-Encapsulate
Package: SOT-323
Origin: China (implied by manufacturer location)
Website: www.cj-elec.com

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Maximum Ratings
Drain-Source Voltage	VDS				-20	V
Gate-Source Voltage	VGS				±8.0	V
Continuous Drain Current	ID	(Ta=25)			-1.4	A
Pulsed Drain Current	IDM	(tp=10µs)			-3.0	A
Power Dissipation	PD	(Ta=25)			0.29	W
Thermal Resistance Junction to Ambient	RθJA				431	°C/W
Junction Temperature	TJ				150	°C
Storage Temperature	Tstg		-50		+150	°C
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage	VDSS	VGS = 0V, ID =-250µA	-20			V
Gate-Source Leakage	IGSS	VDS =0V, VGS =±8V			±100	nA
Zero Gate Voltage Drain Current	IDSS	VDS =-20V, VGS =0V			-1.0	µA
ON CHARACTERISTICS
Gate-Source Threshold Voltage	VGS(th)	VDS =VGS, ID =-250µA	-0.45	-0.7		V
Drain-Source On-State Resistance	RDS(on)	VGS =-4.5V, ID =-1.0A		100		mΩ
		VGS =-2.5V, ID =-0.5A		140		mΩ
		VGS =-1.8V, ID =-0.3A		210		mΩ
CHARGES AND CAPACITANCES
Input Capacitance	Ciss	(VDS =-8.0V,VGS =0V,f =1MHz)		640		pF
Output Capacitance	Coss			120		pF
Reverse Transfer Capacitance	Crss			82		pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time	td(on)	(VGS=-4.5V,VDD=-4.0V, ID =-1.0A,RG=6.2Ω)		6.2		ns
Rise Time	tr			15		ns
Turn-Off Delay Time	td(off)			26		ns
Fall Time	tf			18		ns
Drain-source Body diode characteristics
Forward Diode Voltage	VSD	VGS =0V,IS=-0.3A		-0.62	-1.2	V

2410121609_JSCJ-CJ2101_C52641.pdf

Quality High side load switching P Channel MOSFET JSCJ CJ2101 with plastic encapsulate and SOT 323 package for sale

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