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Low RDS on N Channel MOSFET JSCJ CJ3134K KF designed for portable electronics and battery management

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Low RDS on N Channel MOSFET JSCJ CJ3134K KF designed for portable electronics and battery management

Drain to Source Voltage : 20V

Current - Continuous Drain(Id) : 750mA

RDS(on) : 380mΩ@4.5V,650mA

Gate Threshold Voltage (Vgs(th)) : 1.1V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 9pF

Number : 1 N-channel

Output Capacitance(Coss) : 13pF

Input Capacitance(Ciss) : 79pF

Pd - Power Dissipation : 150mW

Description : N-Channel 20V 750mA 150mW Surface Mount SOT-723

Mfr. Part # : CJ3134K KF

Model Number : CJ3134K KF

Package : SOT-723

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Product Overview

The CJ3134K is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifts.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Product Series: CJ3134K
Package: SOT-723
Material: Plastic-Encapsulate
Certifications: Lead Free Product is Acquired

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
MAXIMUM RATINGS
Drain-Source Voltage	VDS				20	V
Typical Gate-Source Voltage	VGS			±12		V
Continuous Drain Current (note 1)	ID				0.75	A
Pulsed Drain Current (tp=10s)	IDM				1.8	A
Power Dissipation (note 1)	PD				150	mW
Thermal Resistance from Junction to Ambient (note 1)	RJA				833	/W
Junction Temperature	TJ				150
Storage Temperature	TSTG		-55		+150
Lead Temperature for Soldering Purposes(1/8 from case for 10 s)	TL				260
STATIC CHARACTERISTICS
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =250A	20			V
Zero gate voltage drain current	IDSS	VDS =20V,VGS = 0V			1	µA
Gate-body leakage current	IGSS	VGS =±10V, VDS = 0V			±20	µA
Gate threshold voltage (note 2)	VGS(th)	VDS =VGS, ID =250µA	0.35	0.54	1.1	V
Drain-source on-resistance (note 2)	RDS (on)	VGS =4.5V, ID =0.65A		270	380	mΩ
		VGS =2.5V, ID =0.55A		320	450	mΩ
		VGS =1.8V, ID =0.45A		390	800	mΩ
Forward transconductance (note 2)	gFS	VDS =10V, ID =0.8A	1.6			S
Diode forward voltage	VSD	IS=0.15A, VGS = 0V			1.2	V
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance	Ciss	VDS =16V,VGS =0V,f =1MHz		79	120	pF
Output capacitance	Coss	VDS =16V,VGS =0V,f =1MHz		13	20	pF
Reverse transfer capacitance	Crss	VDS =16V,VGS =0V,f =1MHz		9	15	pF
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time (note 3)	td(on)	VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω		6.7		ns
Turn-on rise time (note 3)	tr	VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω		4.8		ns
Turn-off delay time (note3)	td(off)	VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω		17.3		ns
Turn-off fall time (note 3)	tf	VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω		7.4		ns

2410121314_JSCJ-CJ3134K-KF_C62503.pdf

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