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P Channel Power MOSFET JSCJ CJU65P06 Featuring Low Gate Charge and Performance in Portable Equipment

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P Channel Power MOSFET JSCJ CJU65P06 Featuring Low Gate Charge and Performance in Portable Equipment

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 65A

Operating Temperature - : -55℃~+150℃

RDS(on) : 18mΩ@10V

Gate Threshold Voltage (Vgs(th)) : 3V@250uA

Type : P-Channel

Reverse Transfer Capacitance (Crss@Vds) : 480pF

Number : 1 P-Channel

Output Capacitance(Coss) : 980pF

Pd - Power Dissipation : 120W

Input Capacitance(Ciss) : 9.5nF

Gate Charge(Qg) : 152nC@10V

Description : P-Channel 60V 65A 120W Surface Mount TO-252-2L

Mfr. Part # : CJU65P06

Model Number : CJU65P06

Package : TO-252-2L

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Product Overview

The CJU65P06 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers and portable, battery-powered equipment.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Device Code: U65P06
Package: TO-252-2L
Material: Plastic-Encapsulate MOSFETS
Color: Green molding compound (if solid dot present)
Origin: China (implied by manufacturer location)

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Voltage	VDS				-60	V
Gate-Source Voltage	VGS			±20		V
Continuous Drain Current	ID				-65	A
Pulsed Drain Current	IDM				-260	A
Single Pulsed Avalanche Energy	EAS			480		mJ
Power Dissipation	PD			120		W
Thermal Resistance Junction to Ambient	RJA			100		°C/W
Thermal Resistance Junction to Case	RJC			1.04		°C/W
Operating Junction and Storage Temperature Range	TJ ,Tstg		-55		+150	°C
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =-250µA	-60			V
Zero gate voltage drain current	IDSS	VDS =-48V, VGS =0V		18	100	µA
Gate-body leakage current	IGSS	VDS =0V, VGS =±20V			±100	nA
Gate-threshold voltage	VGS(th)	VDS =VGS, ID =-250µA	-1.0	-2.2	-3.0	V
Static drain-source on-state resistance	RDS(on)	VGS =-10V, ID =-20A		13		mΩ
Input capacitance	Ciss	VDS =-25V,VGS =0V, f =1MHz		5900		pF
Output capacitance	Coss			9500
Reverse transfer capacitance	Crss			980
Total gate charge	Qg	VGS=-10V, VDS=-30V, ID=-20A		76		nC
Gate-source charge	Qgs			18
Gate-drain charge	Qg d			20
Turn-on delay time	td(on)	VDD=-30V,RG=3Ω RL=1.5Ω,VGS=-10V, Rg		19		ns
Turn-on rise time	tr			22
Turn-off delay time	td(off)			56
Turn-off fall time	tf			36
Drain-source diode forward voltage	VSD	VGS =0V, IS=-20A		-1.2		V
Continuous drain-source diode forward current	IS				-65	A
Pulsed drain-source diode forward current	ISM				-260	A

2410121913_JSCJ-CJU65P06_C2981813.pdf

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