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Slkor SL20T65K1

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Slkor SL20T65K1

Td(off) : 52ns

Pd - Power Dissipation : 162W

Operating Temperature : -55℃~+150℃@(Tj)

Td(on) : 16ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Input Capacitance(Cies) : -

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.5V@250uA

Gate Charge(Qg) : 43.9nC@20A,15V

Reverse Recovery Time(trr) : -

Switching Energy(Eoff) : 300uJ

Turn-On Energy (Eon) : 790uJ

Description : IGBT FS (Field Stop) 650V 40A 162W Surface Mount TO-263

Mfr. Part # : SL20T65K1

Model Number : SL20T65K1

Package : TO-263

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Product Overview

Features:

Low gate charge
Trench FS Technology
Saturation voltage: VCE(sat), typ =1.6V, IC=20A and TC =25C
RoHS product

Applications:

General purpose inverters
UPS

Brand

SLKormicro

Product Series

SL20T65F1/K1/FL1

Certifications

RoHS

Package Types

TO-247, TO-263, TO-220F

Technical Specifications

Parameter	Symbol	Tests conditions	Min	Typ	Max	Unit	TO-263/TO-247	TO-220F
Collector-Emmiter Voltage	Vces			650		V
Collector Current-continuous (T=25)	Ic			40		A
Collector Current-continuous (T=100)	Ic			20		A
Collector Current-pulse	ICM			80		A
Diode RMS forward current (T=25)	IF			40		A
Diode RMS forward current (T=100)	IF			20		A
Gate-Emmiter Voltage	VGES			20		V
Turn-off safe area			-180			A
Surge non repetitive forward current	IFSM	tp=10ms sinusoidal		80		A
Power Dissipation (TO-247/TO-263)	PD	TC=25		162		W	X
Power Dissipation (TO-220F)	PD	TC=25		46		W		X
Diode Forward Current		TC=100		20		A
Operating and Storage Temperature Range	TJ,TSTG		-55		+150
Maximum Lead Temperature for Soldering Purposes	TL			300
Collector-Emmiter Voltage	BVCES	IC=500A,VGE=0V	650	-	-	V
IGBT Breakdown Voltage Temperature Coefficient	BVCES/TJ	IC=1mA,referenced to 25	-	0.5	-	V/
Zero Gate Voltage Collector Current	ICES	VCE=650V,VGE=0 V,TC=25	-	10		A
Gate-body leakage current	IGESF	VCE=0V,VGE= 20V	-	-	200	nA
Gate-Emmiter Threshold Voltage	VGE(th)	VCE=VGE, lc=250uA	4.5	-	6.5	V
Collector-Emmiter saturation Voltage	VCESAT	VGE=15V,IC=20A TC=25	-	1.6	2.0	V	X	X
Collector-Emmiter saturation Voltage	VCESAT	Tc=125	-	1.75	2.15	V	X	X
Collector-Emmiter saturation Voltage	VCESAT	TC=175	-	1.9	2.3	V	X	X
Short Collector current	Ic(sc)	VGE=15V VCE=360V tsc< 10us Tc=25		116.7		A
Input capacitance	Cies	VCE=25V, VGE=0V, f=1.0MHZ, Tc=25	-	1500	-	pF
Output capacitance	Coes		-	128	-	pF
Reverse transfer capacitance	Cres		-	28.7	-	pF
Turn-On delay time	td(on)	VCE=400V,Ic=20A ,RG=10,VGE=15 V Tc=25 Inductive Load	-	16	-	ns
Turn-On rise time	tr		-	56	-	ns
Turn-off delay time	td(off)		-	52	-	ns
Turn-off Fall time	tf		-	82	-	ns
Turn-on energy	Eon		-	0.79	-	mJ
Turn-off energy	Eoff		-	0.3	-	mJ
Total switching Energy	Etotal		-	1.09	-	mJ
Total Gate Charge	Qg	VCE=400V,Ic=20 ARG=10,VGE=1 5V	-	43.9	-	nC
Diode Forward Voltage	VF	VGE=0V,IF=20A. TC=25	-	1.4	-	V	X	X
Diode Forward Voltage	VF	VGE=0V,IF=20A. TC=175	-	1.0	-	V	X	X
Diode Reverse recovery time	trr	VGE=0V, IF=20A dl=/dt=100A/us	-	254	-	ns
Diode Reverse recovery charge	Qrr		-	347	-	uC
Diode Reverse recovery Current	Irrm		-	2.7	-	A
IGBT Thermal Resistance,Junction to Case	Rth(j-c)			0.77		/W	X
FRD Thermal Resistance,Junction to Case	Rth(j-c)			2.05		/W		X
Thermal Resistance,Junction to Ambitent	Rth(j-A)			33.8		/W	X	X

2409302302_Slkor-SL20T65K1_C6800598.pdf

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