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Plastic Encapsulate Transistor Guangdong Hottech 2SC2712 Low Noise High Gain Electronic Component

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Plastic Encapsulate Transistor Guangdong Hottech 2SC2712 Low Noise High Gain Electronic Component

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 150mW

Transition frequency(fT) : 80MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 150mA

Collector - Emitter Voltage VCEO : 50V

Operating Temperature : -

Description : Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 150mW Surface Mount SOT-23

Mfr. Part # : 2SC2712

Model Number : 2SC2712

Package : SOT-23

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Product Overview

Plastic-Encapsulate Transistors, complementary to 2SA1162, featuring low noise (NF=1 dB Typ, 10dB MAX). Suitable for various electronic applications requiring high gain and low noise characteristics.

Product Attributes

Brand: HOTTECH
Origin: GUANGDONG
Model: 2SC2712

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	VCBO	IC= 100A, IE=0			60	V
Collector-Emitter Breakdown Voltage	VCEO	IC=1mA , IB=0			50	V
Emitter-Base Breakdown Voltage	VEBO	IE= 100A, IC=0			5	V
Collector Current - Continuous	IC				150	mA
Collector Power Dissipation	PC	TA=25			150	mW
Junction Temperature	TJ				125
Storage Temperature	Tstg		-55		+150
Collector Cut-off Current	ICB	VCB= 60 V, IE=0		0.1		A
Emitter Cut-off Current	IEB	VEB=5V, IC=0		0.1		A
DC Current Gain	hFE	VCE=6V, IC=2mA	70		700
Collector-Emitter Saturation Voltage	VCE(sat)	IC= 100mA, IB=10mA		0.1	0.25	V
Transition Frequency	fT	VCE=10V, IC=1mA		80		MHz
Output Capacitance	Cob	VCB=10V, IE=0,f=1 MHz		2.0	3.5	pF
Noise Figure	NF	VCE=6V,IC=0.1mA,f=1kH		1.0	10	dB
hFE Classification	Marking		LO	LY	LG	LL
hFE Range			70-140	120-240	200-400	350-700

2409302232_Guangdong-Hottech-2SC2712_C181181.pdf

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